on-state current 12 amp fs12...h standard scr these series of s ilicon c ontrolled r ectifier use a high performance pnpn technology. these parts are intended for general purpose high current applications where moderate gate insensitivity is required. dec - 02 absolute maximum ratings, according to iec publication no. 134 on-state current average on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak reverse gate voltage peak gate current peak gate dissipation gate dissipation operating temperature storage temperature soldering temperature i t(rms) parameter conditions min. max. unit gate trigger current > 0.5 ma to < 25 ma off-state voltage 200 v ?600 v symbol i t(av) i tsm i tsm i 2 t v grm i gm p gm p g(av) t j t stg t sld 180?conduction angle, t c = 110 ? half cycle, q = 180 ? t c = 110 ? half cycle, 60 hz half cycle, 50 hz t p = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20ms max. 10s max. -40 -40 a a a a a 2 s v a w w ? ? ? 12 8 154 140 98 8 4 10 1 +125 +150 260 to220-ab k a g repetitive peak off state voltage parameter conditions voltage unit symbol v drm v rrm r gk = 1 k w b 200 v d 400 m 600
fs12...h standard scr dec - 02 electrical characteristics gate trigger current off-state leakage current on-state voltage gate trigger voltage gate non trigger voltage holding current parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 33 w . t j = 25 ? ma 09 2 15 2 5 1.6 1.3 0.2 ma ? v v v min max max max max max min 50 60 max / i rrm v tm v gt v gd i h di / dt r th(j-a) critical rate of current rise thermal resistance junction-amb (s = 0.5 cm 2 ) ?/w v d = v drm , r gk = 220 w t j = 125 ? t j = 25 ? v r = v rrm , at i t = 24 amp, tp = 380 ?, t j = 25 ? i t = 500 ma , gate open part number information v d = 12 v dc , r l = 33 w , t j = 25 ? v d = v drm , r l = 3.3k w , r gk = 220 w , t j = 125 ? ma min a/? fagor scr current case voltage sensitivity f s 12 09 b h 00 forming tu packaging r d t j = 125 ? r d dynamic resistance max 30 m w 08 0.5 5 10 2 25 30 40 15 max i l ma 60 60 30 latching current i g = 1.2 i gt v/? dv / dt critical rate of voltage rise v d = 0.67 x v drm , gate open min 200 250 50 1.3 r th(j-c) thermal resistance junction-case for dc ?/w v t0 t j = 125 ? threshold voltage max 0.85 v tr 100 ns, f = 60 hz, t j = 125 ? i g = 2 x i gt
dec - 02 fs12...h standard scr 1.0 k = [zth(j-c) / rth (j-c)] fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 1e-3 1e-2 1e-1 1e+0 tp (s) 0.5 0.2 0.1 i t(av) (a) fig. 1: maximum average power dissipation versus average on-state current. 0 25 50 75 100 125 fig. 2: average and d.c. on-state current versus case temperature. p (w) tc ( c) i t(av) (a) 0 2 4 6 8 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 1 3 5 7 9 1 3 5 7 9 11 13 10 i gt , i h (tj) / i gt , i h (tj = 25 ?) fig. 4: relative variation of gate trigger current and holding current versus junction temperature. tj (?) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 20 60 80 100 0 40 120 140 igt ih 1 10 100 1000 fig. 5: non repetitive surge peak on-state current versus number of cycles. 160 140 120 100 80 60 40 20 0 i tsm (a) number of cycles tj initial = 25 c f = 50 hz 1000 i tsm (a). i 2 t (a 2 s) fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2 t. tp(ms) 100 10 i tsm i 2 t tj initial = 25 ? 1 10
dec - 02 fs12...h standard scr package mechanical data to-220ab a a1 a2 b b1 b2 c c1 c2 e f i i4 l i2 i3 m ref. dimensions milimeters min. nominal max. 15.20 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 3.75 16.40 2.60 15.90 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70
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